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| SMD Type Transistors PNP Epitaxial Planar Silicon Transistor 2SA1257 SOT-23 +0.1 2.9-0.1 +0.1 0.4-0.1 Unit: mm +0.1 2.4-0.1 1 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Small output capacitance. 0.55 High breakdown voltage. +0.1 1.3-0.1 Features 0.4 3 +0.05 0.1-0.01 +0.1 0.97-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current (pulse) Collector dissipation Jumction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating -180 -160 -5 -80 -150 200 125 -55 to +125 Unit V V V mA mA mW +0.1 0.38-0.1 0-0.1 www.kexin.com.cn 1 SMD Type 2SA1257 Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current Gain Gain bandwidth product Output capacitance Base-emitter voltage Collector-emitter saturation voltage Collector-to-base breakdown voltage Collector-to-emitter breakdown voltage Emitter-base breakdown voltage Turn-on time Symbol IcBO IEBO hFE fT Cob VBE Testconditons VCB = -120V , IE = 0 VEB = -4V , IC = 0 VCE = -5V , IC = -10 mA VCE = -10V , IC = -10 mA VCB = -10V , f = 1MHz VCE = -5V , IC = -10 mA Transistors Min Typ Max -0.1 -0.1 Unit iA iA 60 130 2.4 270 MHz 3.2 -1.5 -0.7 pF V V V V V 0.15 is VCE(sat) IC = -30mA , IB = -3mA V(BR)CBO IC = -10iA , IE = 0 V(BR)CEO IC = -1mA , RBE = V(BR)EBO IE = -10iA , IC = 0 ton -180 -160 -5 Storage time tstg 0.95 is Fall time tf 0.15 is hFE Classification Rank hFE G3 60 120 G4 90 180 G5 135 270 2 www.kexin.com.cn |
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